BAS32L High-speed switching diode Rev. 05 — 3 January 2008 Product data sheet Product profile 1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in asmall hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. 1.2 Features
■ Small hermetically sealed glass SMD package
■ High-speed switching■ Reverse polarity protection
1.4 Quick reference data Quick reference data Parameter Conditions
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. NXP Semiconductors High-speed switching diode Pinning information Description Simplified outline
The marking band indicates the cathode. Ordering information Ordering information Type number Description
hermetically sealed glass surface-mounted package;
Marking codes Type number Marking code Limiting values Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Parameter Conditions
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Parameter Conditions
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Thermal characteristics Thermal characteristics Parameter Conditions
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Characteristics Characteristics
Tamb = 25 °C unless otherwise specified. Parameter Conditions
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
When switched from IF = 50 mA; tr = 20 ns.
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode Forward current as a function of ambient Forward current as a function of forward temperature; derating curve Non-repetitive peak forward current as a Reverse current as a function of junction function of pulse duration; maximum values temperature
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode Diode capacitance as a function of reverse voltage; typical values Test information
Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05
Reverse recovery time test circuit and waveforms
Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005
Forward recovery voltage test circuit and waveforms
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode Package outline Package outline SOD80C 10. Packing information Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. Type number Description Packing quantity
For further information and the availability of packing methods, see
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode 11. Soldering Reflow soldering footprint SOD80C Fig 10. Wave soldering footprint SOD80C
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode 12. Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes • The format of this data sheet has been redesigned to comply with the new identity • Legal texts have been adapted to the new company name where appropriate. • : amended • or IR reverse current amended from mA to µA • • : updated
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode 13. Legal information Data sheet status Document status Product status Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at URL
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the Absolute Maximum Ratings System of IEC 60134) may cause permanent
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NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode 15. Contents
Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’. NXP B.V. 2008. All rights reserved.
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Date of release: 3 January 2008 Document identifier: BAS32L_5
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